SBE813_12 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – 30V, 3.0A Rectifier

SBE813
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
Conditions
IR=0.5mA
IF=2.0A
IF=3.0A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (1200mm²Ã—0.8mm)
min
30
Ratings
typ
0.435
0.47
90
50
max
0.485
0.52
42
20
Unit
V
V
V
μA
pF
ns
°C / W
Ordering Information
Device
SBE813-TL-E
Package
VEC8
Shipping
3,000pcs./reel
memo
Pb Free
IF -- VF
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1
0.2
0.3
0.4
0.5
Forward Voltage, VF -- V
PF(AV) -- IO
2.0
Rectangular
(1)
1.8 ^wave
0.6
0.7
IT09868
(2)(4) (3)
1.6
θ
360°
1.4
Sine wave
1.2
1.0
180°
360°
0.8
0.6
0.4
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
0.2
(3)Rectangular wave θ=180°
0
(4)Sine wave θ=180°
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Average Output Current, IO -- A IT09870
10000
Ta=125^°C
1000
100
10
1.0
0.1
IR -- VR
100^°C
75°C
50°^C
25°^C
0°C
--25^°C
0.01
0.001
0
5
10
15
20
25
Reverse Voltage, VR -- V
4.00E--04
PR(AV) -- VR
(1)Rectangular wave θ=300°
3.50E--04 ^{(2)Rectangular wave θ=240°}
(3)Rectangular wave θ=180°
3.00E--04 ^{(4)Sine wave θ=180°}
360°
2.50E--04 _Rectangular
θ
wave
VR
2.00E--04
Sine wave
180°
360°
1.50E--04
VR
1.00E--04
30
35
IT09869
(1)
(2)
(3)
(4)
5.00E--05
0.00E+00
0
5
10
15
20
25
30
35
Peak Reverse Voltage, VR -- V
IT10631
No.8967-2/6