MCH6663_12 Datasheet, PDF (2/9 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH6663
Electrical Characteristics at Ta=25°C
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.9A
ID=0.9A, VGS=10V
ID=0.5A, VGS=4.5V
ID=0.5A, VGS=4V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=10V, ID=1.8A
IS=1.8A, VGS=0V
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--10V
ID=--0.4A, VGS=--4.5V
ID=--0.4A, VGS=--4V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--1.5A
IS=--1.5A, VGS=0V
Ratings
Unit
min
typ
max
30
1.2
1.1
145
245
270
88
19
11
3.4
3.6
10.5
4.0
2.0
0.33
0.29
0.86
V
1
μA
±10
μA
2.6
V
S
188 mΩ
343 mΩ
378 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2
V
--30
V
--1
μA
±10
μA
--1.2
--2.6
V
1.3
S
250
325 mΩ
397
555 mΩ
458
641 mΩ
82
pF
22
pF
16
pF
4.0
ns
3.3
ns
12
ns
5.4
ns
2.2
nC
0.36
nC
0.49
nC
--0.9
--1.5
V
No.8758-2/9