MCH6622 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

MCH6622
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=1A
VDS=30V, VGS=10V, ID=1A
VDS=30V, VGS=10V, ID=1A
IS=1A, VGS=0
Ratings
Unit
min
typ
max
5
ns
4
ns
12
ns
12
ns
3.0
nC
0.6
nC
0.6
nC
0.9
1.2
V
Package Dimensions
unit : mm
2173A
0.3
0.15
456
3 21
0.65
2.0
6 54
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1 2 3 SANYO : MCPH6
Electrical Connection
6
5
4
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=30V
ID=500mA
RL=60Ω
D
VOUT
P.G
50Ω
S _MCH6622
ID -- VDS
1.0
3.5V
0.8
0.6
VGS=3.0V
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT05973
2.0
VDS=10V
1.8
ID -- VGS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-to-Source Voltage, VGS -- V IT05974
No.8249-2/4