MCH6612 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

MCH6612
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=200mA
VDS=10V, VGS=10V, ID=200mA
VDS=10V, VGS=10V, ID=200mA
IS=200mA, VGS=0
Ratings
Unit
min
typ
max
22
pF
12
pF
4.6
pF
12
ns
12
ns
260
ns
110
ns
1.86
nC
0.28
nC
0.45
nC
0.83
1.2
V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=25V
ID=100mA
RL=250Ω
D
VOUT
MCH6612
P.G
50Ω
S
Electrical Connection
D1
G2
S2
S1
G1
D2
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
6
ID -- VDS
2.5V
VGS=2.0V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT00250
RDS(on) -- VGS
Ta=25°C
5
4
ID=50mA
3
100mA
2
1
0
0
1
234
5
67
8
9 10
Gate-to-Source Voltage, VGS -- V IT00252
0.40
VDS=10V
0.35
ID -- VGS
0.30
0.25
0.20
0.15
0.10
0.05
0
0
10
7
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS -- V IT00251
RDS(on) -- ID
VGS=10V
5
3
Ta=75°C
2
25°C
--25°C
1.0
0.01
23
5 7 0.1
23
Drain Current, ID -- A
5 7 1.0
IT00253
No.7078-2/4