MCH6122 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifier

MCH6122
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
IECO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB= -30V, IE=0A
VEB= -4V, IC=0A
VEC= -4.5V, IB=0A
VCE= -2V, IC= -500mA
VCE= -10V, IC= -500mA
VCB= -10V, f=1MHz
IC= -1.5A, IB= -30mA
IC= -1.5A, IB= -75mA
IC= -1.5A, IB= -30mA
IC= -10μA, IE=0A
IC= -1mA, RBE=∞
IE= -10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
200
400
25
-180
-120
-0.83
-30
-30
-5
50
270
27
max
-0.1
-0.1
-1
560
-270
-180
-1.2
Unit
μA
μA
μA
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7022A-007
2.0
654
0.15
0 t o 0.02
1 23
0.65
0.3
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
50Ω
RB
+
100μF
24Ω
+
470μF
VBE=5V
VCC= --12V
--20IB1=20IB2=IC=--500mA
123
654
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : MCPH6
IC -- VCE
--2.0
--1.8
--20mA
--10mA
--1.6
--8mA
--1.4
--6mA
--1.2
--1.0
--4mA
--0.8
--0.6
--2mA
--0.4
--0.2
0
0
IB=0mA
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Collector-to-Emitter Voltage, VCE -- V IT04554
--3.0
VCE= --2V
--2.5
IC -- VBE
--2.0
--1.5
--1.0
--0.5
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Bass-to-Emitter Voltage, VBE -- V IT04555
No. A1287-2/4