MCH3376_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH3376
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--10V
ID=--0.4A, VGS=--4.5V
ID=--0.4A, VGS=--4V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--1.6A
IS=--1.6A, VGS=0V
Switching Time Test Circuit
VIN
--4.5V
0V
PW=10μs
D.C.≤1%
VIN
G
VDD= --10V
ID= --750mA
RL=13.3Ω
D
VOUT
P.G
50Ω
S ^MCH3376
Ratings
Unit
min
typ
max
--30
V
--1
μA
±10
μA
--1.2
--2.6
V
1.3
S
227
295 mΩ
374
523 mΩ
435
609 mΩ
82
pF
22
pF
16
pF
4.0
ns
3.3
ns
12
ns
5.4
ns
2.2
nC
0.36
nC
0.49
nC
--0.9
--1.5
V
Ordering Information
Device
MCH3376-TL-E
Package
MCPH3
Shipping
3,000pcs./reel
memo
Pb Free
No. A1564-2/7