LV23200T Datasheet, PDF (2/17 Pages) Sanyo Semicon Device – Bi-CMOS IC For Home Stereo System 1-chip Tuner IC Incorporating PLL

LV23200T
Operating Condition at Ta = 25 °C
Parameter
Symbol
Conditions
Ratings
Unit
Recommended supply voltage
VCC
5.0
V
VDD
3.0
V
Operating supply voltage range
VCC op
4.5 to 6.0
V
VDD op1
X’tal oscillation = 4.5MHz
2.7 to 3.3
V
* Handle pin 34 with care because its electrostatic voltage at C = 200pF and R = 0Ω is 110 V.
Operating Characteristics at Ta = 25°C, VCC = 5.0V, VDD = 3.0V
Parameter
[Current dissipation]
Symbol
Conditions
Ratings
Unit
min
typ
max
FM tuner block
ICCFM
No input in FM mode
25
35
AM tuner block
ICCAM
No input in AM mode
14
24
PLL block
IDDFM
X’tal = 4.5MHz, No input at tuner
2.0
3.0
[FM-FE characteristics (MPX)] : FM-IF (5PIN) input, fc = 10.7MHz, fm = 1kHz, 75kHzdev (L+R = 90%, Pilot = 10%)
45
mA
34
mA
4.0
mA
Demodulation output
3dB sensitivity 1
3dB sensitivity 2
VO
VIN = 100dBµV
LS1
VIN = 70dBµV reference, input at -3dB
∗at input of FIFA (pin 1)
LS2
VIN = 100dBµV reference, input at -3dB
∗at input of FMFA (pin 5)
Total harmonic distortion
Signal-to-noise ratio
AM suppression ratio
SD sensitivity
THD1
S/N
AMR
SD-1
VIN = 100dBµV, MONO
VIN = 100dBµV
VIN = 100dBµV, AM = 30%
0%mod, SD sensitivity mode 1
Total harmonic distortion
THD2
VIN = 100dBµV, MAIN-MOD
Separation
SEP
VIN = 100dBµV, L output/R output
ST sensitivity
VL
VIN = 100dBµV, (L+R)+Pilot
Mute attenuation
MUTE
VIN = 100dBµV, L output
Carrier leakage
CL
VIN = 100dBµV, (L+R)+Pilot
[AM characteristics] : fc = 999kHz, fm = 1kHz, 30%mod
Demodulation output 1
Demodulation output 2
Signal-to-noise ratio 1
Signal-to-noise ratio 2
Total harmonic distortion
SD sensitivity
VO1
VO2
S/N1
S/N2
THD
SD-ON
VIN = 23dBµV, 30%mod, fm = 1kHz
VIN = 80dBµV, 30%mod, fm = 1kHz
VIN = 23dBµV
VIN = 80dBµV
VIN = 80dBµV
0%mod (Internally fixed sensitivity)
[PLL characteristics]
450
550
650 mVrms
28
33 dBµV
35
40 dBµV
0.4
1.5
%
70
76
dB
36
40
dB
43
50
57 dBµV
0.5
1.5
%
30
45
dB
3.0
5.5
%
60
dB
30
40
dB
50
80
130 mVrms
170
240
310 mVrms
15
20
dB
48
54
dB
0.4
1.3
%
14
24
34 dBµV
Internal return resistance
Built-in output resistance
Hysteresis width
Output high level voltage
Output low level voltage
Output high level voltage
Input high level current
Rf
Rd
VHIS
VOH
VOL1
VOL2
VOL3
VOL4
IIH1
IIH2
IIH3
IIL1
IIL2
IIL3
XIN
XOUT
CE, CL, DI
PD ; IO = -1mA
PD ; IO = 1mA
BO ; IO = 1mA
BO ; IO = 5mA
DO ; IO = 1mA
AOUT ; IO = 1mA, AIN = 2.0V
CE, CL, DI ; VI = 6.0V
XIN ; VI = VDD
AIN ; VI = 6.0V
CE, CL, DI ; VI = 0V
XIN ; VI = 0V
AIN ; VI = 0V
VDD-1.0
0.16
0.16
8
MΩ
250
kΩ
0.1VDD
V
V
1.0
V
0.25
V
1.25
V
0.25
V
0.5
V
5.0
µA
0.9
µA
200
nA
5.0
µA
0.9
µA
200
nA
Continued on next page.
No.8301-2/17