LV2105V Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – 530 MHz PLL Frequency Synthesizer LSI

Pin Assignment
LV2105V
Allowable Operating Ranges at Ta = –40 to +85 °C
Parameter
Supply voltage
High-level input voltage
Low-level input voltage
Output voltage
Input frequency
Input amplitude
Crystal oscillation condition
Symbol
V_CC
V_IH
V_IL
V_OUT
f_IN(1)
f_IN(2)
V_IN(1)
V_IN(2)
Xtal
Conditions
V_CCR, V_CCD
CE, CL, DI
CE, CL, DI
PDP
XIN: Sine wave capacitive coupling
PI: Sine wave capacitive coupling
XIN: Sine wave capacitive coupling
PI: Sine wave capacitive coupling
XIN, (XOUT)
Min
Typ Max Unit
2.5
5.5 V
V_CCR × 0.7
0
5.5 V
+0.6 V
0
+7.0 V
5
22 MHz
100
530 MHz
–12
+10 dBm
–18
0 dBm
5
13 MHz
Electrical Characteristics at Ta = 25 °C, V_CCR = 3.0 V, V_CCD = 3.0 V
Parameter
Low-level output voltage
High-level output voltage
Output off leak current
C.P output current
High-level input current
Low-level input current
Internal feedback resistance
Supply current
PS supply current
Symbol
V_OL(1)
V_OL(2)
V_OL(3)
V_OL(4)
V_OH(1)
V_OH(2)
I_OFF(1)
I_OFF(2)
I_CP
I_H(1)
I_H(2)
I_H(3)
I_L(1)
I_L(2)
I_L(3)
Rf
I_CC(1)
I_CC(2)
Conditions
PDP: I_O = 0.5 mA
PDN: I_O = 0.5 mA
PE: I_O = 0.5 mA
OUT: I_O = 2.0 mA
PE: I_O = –0.5 mA
PDN: I_O = –0.5 mA
PDP: V_O = 3.0 V
CP: V_O = 1.5 V
CP: V_O = 1.5 V
CE, CL, DI: V_I = 3.0 V
XIN: V_I = 3.0 V
TEST: V_I = 3.0 V
CE, CL, DI: V_I = 0 V
XIN: V_I = 0 V
TEST: V_I = 0 V
XIN
V_CCR, V_CCD: *1
V_CCR, V_CCD: *1
min
typ max Unit
0.5 V
0.5 V
0.5 V
0.5 V
V_CC −0.5
V_CC −0.5
V
V
1.0 µA
100 nA
±4.0 ±7.5 ±11 mA
5.0 µA
2.3 3.0 4.3 µA
5.0 µA
5.0 µA
2.3 3.0 4.3 µA
5.0 µA
1.0
MΩ
5.5 9.0 mA
0.4 0.6 mA
*1: XIN = 12.8 MHz, 10 dBm, PI = 400 MHz, 0 dBm, other input pins = 0 V, output, I/O pins = OPEN CP OFF
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