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LC75852E Datasheet, PDF (2/16 Pages) Sanyo Semicon Device – Asynchronous Silicon Gate 1/2 Duty LCD Driver with On-Chip Key Input Function
LC75852E, 75852W
Allowable Operating Ranges at Ta = –40 to +85°C, VSS = 0 V
Parameter
Symbol
Conditions
min
typ
Supply voltage
Input high-level voltage
Input low-level voltage
Recommended external
resistance
VDD
VIH1
VIH2
VIL
ROSC
VDD
CE, CL, DI, RES
KI1 to KI5
CE, CL, DI, RES, KI1 to KI5
OSC
4.5
0.8 VDD
0.6 VDD
0
62
Recommended external
capacitance
COSC
OSC
680
Guaranteed oscillator range
Data setup time
Data hold time
CE wait time
CE setup time
CE hold time
High-level clock pulse width
Low-level clock pulse width
Rise time
Fall time
DO output delay time
DO rise time
RES switching time
fOSC
OSC
tds
CL, DI: Figure 1
tdh
CL, DI: Figure 1
tcp
CE, CL: Figure 1
tcs
CE, CL: Figure 1
tch
CE, CL: Figure 1
tøH
CL: Figure 1
tøL
CL: Figure 1
tr
CE, CL, DI: Figure 1
tf
CE, CL, DI: Figure 1
tdc
DO, RPU = 4.7 kΩ, CL = 10 pF*: Figure 1
tdr
DO, RPU = 4.7 kΩ, CL = 10 pF*: Figure 1
t2
Figure 2
25
50
160
160
160
160
160
160
160
160
160
10
Note: * Since DO is an open-drain output, these values differ depending on the pull-up resistor RPU and the load capacitance CL.
Electrical Characteristics in the Allowable Operating Ranges
max
Unit
6.0
V
VDD
V
VDD
V
0.2 VDD
V
kΩ
pF
100 kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
1.5
µs
1.5
µs
µs
Parameter
Hysteresis
Input high-level current
Input low-level current
Input floating voltage
Pull-down resistance
Output off leakage current
Output high-level voltage
Output low-level voltage
Output middle-level voltage
Current drain
Symbol
VH
IIH
IIL
VIF
RPD
IOFFH
VOH1
VOH2
VOH3
VOH4
VOL1
VOL2
VOL3
VOL4
VOL5
VMID1
VMID2
IDD1
IDD2
Conditions
CE, CL, DI, RES, KI1 to KI5
CE, CL, DI, RES: VI = 6.0 V
CE, CL, DI, RES: VI = 0 V
KI1 to KI5
KI1 to KI5: VDD = 5.0 V
DO: VO = 6.0 V
KS1 to KS6: IO = –1 mA
P1 to P4: IO = –1 mA
S1 to S45: IO = –10 µA
COM1, COM2: IO = –100 µA
KS1 to KS6: IO = 50 µA
P1 to P4: IO = 1 mA
S1 to S45: IO = 10 µA
COM1, COM2: IO = 100 µA
DO: IO = 1 mA
COM1, COM2: VDD = 6.0 V, IO = ±100 µA
COM1, COM2: VDD = 4.5 V, IO = ±100 µA
Sleep mode, Ta = 25°C
VDD = 6.0 V, output open, Ta = 25°C, fOSC = 50 kHz
min
typ
max
Unit
0.1 VDD
V
5.0 µA
–5.0
µA
0.05 VDD
V
50
100
250 kΩ
6.0 µA
VDD – 1.0
VDD – 1.0
VDD – 1.0
VDD – 0.6
0.4
1.0
V
V
V
V
3.0
V
1.0
V
1.0
V
0.6
V
0.1
0.5
V
2.4
3.0
3.6
V
1.65
2.25
2.85
V
5 µA
1.4
2.5 mA
No. 4828-2/16