LB11920 Datasheet, PDF (2/10 Pages) Sanyo Semicon Device – Three-Phase Brushless Motor Driver for Office Equipment Applications

Allowable Operating Ranges at Ta = 25°C
Parameter
Supply voltage range 1
Supply voltage range 2
HP pin applied voltage
HP pin output current
Symbol
VM
V_CC
VHP
IHP
LB11920
Conditions
Electrical Characteristics at Ta = 25°C, VM = RF = 27 V, V_CC = 5 V
Parameter
Symbol
Conditions
Supply current 1
Supply current 2
[Output block]
IV_CC-1
IV_CC-2
V_CC pin
V_CC pin at stop mode
Output saturation voltage 1
Output saturation voltage 2
Output saturation voltage 3
Output leakage current
Output delay time 1
V_O sat1
V_O sat2
V_O sat3
I_O leak
td1
I_O = 1.0 A, V_O (SINK) + V_O (SOURCE)
I_O = 2.0 A, V_O (SINK) + V_O (SOURCE)
I_O = 3.0 A, V_O (SINK) + V_O (SOURCE)
PWMIN “H” → “L”
Output delay time 2
td2
PWMIN “L” → “H”
Lower diode forward 1
VD1-1
ID = –1.0 A
Lower diode forward 2
VD1-2
ID = –2.0 A
Lower diode forward 3
VD1-3
ID = –3.0 A
Upper diode forward 1
VD2-1
ID = 1.0 A
Upper diode forward 2
VD2-2
ID = 2.0 A
Upper diode forward 3
VD2-3
ID = 3.0 A
[Hall Amplifier Block]
Input bias current
IHB
Common-mode input voltage range 1
VICM1 Hall device used
Common-mode input voltage range 2
VICM2 For input one-side bias (Hall IC application)
Hall input sensitivity
at differential input
Hysteresis width
∆VIN
Input voltage L → H
VSLH
Input voltage H → L
VSHL
[PWM oscillator]
Output H level voltage
Output L level voltage
External C charge current
V_OH (PWM)
V_OL (PWM)
ICHG (PWM)
VPWM = 2.1 V
Oscillator frequency
f (PWM) C = 1000 pF
Amplitude
V (PWM)
[CSD circuit]
Operating voltage
External C charge current
V_OH (CSD)
ICHG (CSD) VCSD = 0V
Operating time
T (CSD) C = 10 µF *Design target value
Note: *This parameter is a design target value and is not measured.
Ratings
Unit
9.5 to 30
V
4.5 to 5.5
V
0 to 32
V
0 to 3
mA
Ratings
Unit
min
typ
max
9
13 mA
2.0
3.0 mA
1.7
2.4
V
2.0
2.9
V
2.4
3.5
V
100
µA
1.25
2.5
µs
1.8
3.6
µs
1.1
1.5
V
1.3
1.9
V
1.5
2.3
V
1.3
1.7
V
2.0
2.7
V
2.7
3.7
V
–2
–0.1
µA
0.5
V_CC – 2.0
V
0
V_CC
V
50
mVp-p
20
30
50 mV
5
15
25 mV
–25
–15
–5 mV
2.75
3.0
3.25
V
1.0
1.2
1.3
V
–60
–45
–30
µA
15.8
20
24.2 kHz
1.6
1.8
2.1 Vp-p
3.6
3.9
–15
–11
3.5
4.2
V
–7
µA
s
Continued on next page.
No. 7229-2/10