LB11822 Datasheet, PDF (2/11 Pages) Sanyo Semicon Device – Three-Phase Brushless Motor Driver for OA Products

Absolute Maximum Ratings at Ta = 25°C
Parameter
Supply voltage range 1
Voltage output current
LD output current
Symbol
V_CC
I_REG
ILD
LB11822
Conditions
Ratings
Unit
9.5 to 28
V
0 to – 30
mA
0 to 15
mA
Electrical Characteristics at Ta = 25°C, V_CC = VM = 24 V
Parameter
Symbol
Conditions
Supply Current 1
Supply Current 2
[Output Block]
Output saturation voltage 1
Output saturation voltage 2
Output leakage current
Lower side diode forward voltage 1
Lower side diode forward voltage 2
[5 V Voltage Output]
Output voltage
Voltage regulation
Load regulation
[Hall Amplifier]
Input bias current
Common-mode input voltage range
Hall input sensitivity
Hysteresis
Input voltage low→ high
Input voltage high→ low
[PWM Oscillator Circuit]
High-level output voltage
Low-level output voltage
Oscillator frequency
Amplitude
[CSD Circuit]
Operating voltage
External C charging current
Operating time
[Current Limiter Operation]
Limiter
[Thermal Shutdown Operation]
Thermal shutdown operating temperature
Hysteresis
[FG Amplifier]
Input offset voltage
Input bias current
Output H level voltage
Output L level voltage
FG input sensitivity
Schmitt amplitude for the next stage
Operating frequency range
Open-loop gain
I_CC1
I_CC2
When stopped
V_Osat1
V_Osat2
I_Oleak
VD1
VD2
I_O = 1.0 A, V_O (SINK)+ V_O (SOURCE)
I_O = 2.0 A, V_O (SINK)+ V_O (SOURCE)
ID = –1.0 A
ID = –2.0 A
VREG
∆VREG1
∆VREG2
I_O = –5 mA
V_CC = 9.5 to 28 V
I_O = –5 to –20 mA
IHB
VICM
∆V_IN
VSLH
VSHL
V_OH(PWM)
V_OL(PWM)
f(PWM) C = 3900 pF
V(PWM)
V_OH(CSD)
ICHG
T(CSD) C = 10 µF Design target value*
VRF V_CC–VM
TSD
∆TSD
Design target value* (junction temperature)
Design target value* (junction temperature)
VIO(FG)
IB(FG)
V_OH(FG)
V_OL(FG)
IFGO = –0.2 mA
IFGO = 0.2 mA
Gain: 100
Design target value*
f(FG) = 2 kHz
Note: * These are design target values and are not tested.
Ratings
Unit
min
typ
max
23
30 mA
3.5
5 mA
2.0
2.5
V
2.6
3.2
V
100
µA
1.2
1.5
V
1.5
2.0
V
4.65
5.00
5.35
V
30
100 mV
20
100 mV
–2
–0.5
µA
1.5
VREG–1.5 V
80
mV_P-P
15
24
42 mV
12
mV
–12
mV
2.5
2.8
3.1
V
1.2
1.5
1.8
V
18
kHz
1.05
1.30
1.55 V_P-P
3.6
3.9
–17
–12
3.3
4.2
V
–9
µA
s
0.45
0.5
0.55
V
150
180
°C
50
°C
–10
–1
VREG–1.2 VREG–0.8
0.8
3
100
180
45
51
+10 mV
+1
µA
V
1.2
V
mV
250 mV
2 kHz
dB
Continued on next page.
No. 7105-2/11