LA9450CL Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – Bi-CMOS IC For Laser Diode For Laser Diode

Operating Condition at Ta = 25°C
Parameter
Recommend supply voltage
Operating supply voltage range
Symbol
VCC1
VCC2
VCC1 opg
VCC2 opg
LA9450CL
Conditions
Ratings
Unit
2.4
V
2.8
V
2.0 to 3.5
V
2.6 to 3.5
V
Electrical Characteristics at Ta = 25°C, VCC1 = 2.4V, VCC2 = 2.8V, RL = 25Ω
Parameter
Symbol
Conditions
Supply current 1
DC mode
Supply current 2
Pulse mode
Supply current 3
Pulse mode
Output current
Current gain
Maximum output current Pulse
Maximum output current DC
Maximum output voltage Pulse
Maximum output voltage DC
Cont high level
ICC11
ICC12
ICC21
ICC22
ICC31
ICC32
IOUT
Igain
IOUT maxP
IOUT maxD
VOUT maxP
VOUT maxD
Vcont H
IIN=0µA, Vcont=VCC2
VSW=0V, RL=∞
VCC1
VCC2
IIN=0µA, Vcont=VCC2
VSW=VCC2
VCC1
VCC2
IIN=500µA, Vcont=0V
VSW=VCC2
VCC1
VCC2
IIN=500µA, Vcont=0V
IIN=500µA, Vcont=0V
IIN=1200µA, Vcont=0V, RL=10Ω
IIN=1200µA, Vcont=0V, RL=10Ω
IIN=1000µA, Vcont=0V, VSW=VCC2
IIN=1000µA, Vcont=0V, VSW=0V
Cont low level
Vcont L
SW High level
VSW H
SW Low level
VSW L
IIN Input resistance
RIN
* Rising edge time
tr
RL=10Ω, IOUT peak=40mA, 10→90%
* Falling edge time
tf
RL=10Ω, IOUT peak=40mA, 90→10%
*Cont falling edge delay time
Tondelay
IOUT peak=55mA, cont 50%→Output 50%
*Cont falling edge delay time
Tofdelay
IOUT peak=55mA, cont 50%→Output 50%
* Design target value and no measurement is performed.
min
300
Ratings
typ
500
unit
max
1500
µA
0.1
5
µA
300
500
670
µA
70
110
150
µA
300
530
710
µA
68
80
93 mA
65
75
85 mA
130
150
170
140
165
210 mA
150
175
210 mA
2.4
2.58
V
2.15
2.24
V
VCC2/2
-0.2
VCC2+0.2
V
0.4
V
VCC1-0.7
-0.2
VCC2+0.2
V
0.15
V
270
330
390
Ω
2.9
4.1
ns
6.1
8.6
ns
6.8
8.9
ns
10.8
14.1
ns
Package Dimensions
unit : mm (typ)
3291
Top View
2.0
Bottom View
0.3
10
1
6
5
0.05
SANYO : ECSP3020-10
No.7885-2/5