ISB-E48-0 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – Ultrathin Miniature Package Charger Circuit Voltage Sensor + 3 P-channel MOSFETs

ISB-E48-0, ISB-E48-1
Specifications
Absolute Maximum Ratings at Ta = 25°C
Internal Device
Parameter
Symbol
IC
Input voltage
Output current
Output voltage
Allowable power dissipation
TR1
Drain-to-source voltage
Gate-to-source voltage
Drain current
Allowable power dissipation
TR2 and TR3
Drain-to-source voltage
Gate-to-source voltage
Drain current
Allowable power dissipation
Operating ambient temperature
VIN
IOUT
VOUT
PD-IC
VDSS
VGSS
ID
PD-T
VDSS
VGSS
ID
PD-T
Topr
Storage ambient temperature
Tstg
* Specified board: 40mm×25mm×0.8mm FR4 board
Conditions
When mounted on a specified board *
When mounted on a specified board *
When mounted on a specified board *
Ratings
Unit
12
V
50 mA
VSS-0.3 to VIN+0.3
V
0.65
W
-20
V
±10
V
-2.0
A
1.4
W
-20
V
±10
V
-4
A
1.5
W
-30 to +85 °C
-40 to +125 °C
Electrical Characteristics
Overall Operating Characteristics at Ta = 25°C, with a dedicated test circuit
Internal Device
Parameter
IC
Detecting voltage
Current consumption
Output current
TR1
Drain-to-source breakdown voltage
Drain-to-source cutoff current
Gate-to-source leakage current
Gate-to-source cutoff voltage
Drain-to-source on resistance
TR2 and TR3
Drain-to-source breakdown voltage
Drain-to-source cutoff current
Gate-to-source leakage current
Gate-to-source cutoff voltage
Drain-to-source on resistance
Symbol
Conditions
VDF
ISS
IOUT1
IOUT2
VDSS
IDSS
IGSS
VGS(off)
RDS(on)1
RDS(on)2
RDS(on)3
VDSS
IDSS
IGSS
VGS(off)
RDS(on)1
RDS(on)2
ISB-E48-0
ISB-E48-1
VIN=3.0V
ISB-E48-0
NchVDS=0.5V,VIN=2.0V
ISB-E48-1
NchVDS=0.5V,VIN=3.0V
PchVDS=2.1V, VIN=8.0V
ID=-1mA, VGS=0V
VDS=-20V, VGS=0V
VGS=±8V, VDS=0V
VDS=-10V, ID=-1mA
ID=-1A, VGS=-4V
ID=-0.5A, VGS=-2.5V
ID=-0.1A, VGS=-1.8V
ID=-1mA, VGS=0V
VDS=-20V, VGS=0V
VGS=±8V, VDS=0V
VDS=-10V, ID=-1mA
ID=-2A, VGS=-4.5V
* Design guaranteed value
ID=-1A, VGS=-2.5V
* Design guaranteed value
min
2.646
3.234
Ratings
typ
2.7
3.3
0.9
3.0
7.7
Unit
max
2.754 V
3.366 V
3.0 µA
mA
5.0
10.1
-10.0
-20
-0.3
125
155
195
-20
-0.4
mA
-2.0 mA
V
-10 µA
±10 µA
-1.0 V
165 mΩ
220 mΩ
280 mΩ
V
-1.0 µA
±10 µA
-1.3 V
63 mΩ
96 mΩ
No.0006-2/6