ISB-A27-0 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrathin Miniature Package 4-channel N-channel MOSFET Array

ISB-A27-0
Electrical Characteristics
Overall Operating Characteristics at Ta = 25°C, common to TR1, TR2, TR3, and TR4
Parameter
Drain-to-source breakdown voltage
Drain-to-source cutoff current
Gate-to-source leakage current
Gate-to-source cutoff current
Drain-to-source on resistance
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
min
30
Ratings
typ
3.4
4.2
6.7
Unit
max
V
10 µA
±10 µA
1.3
V
11
Ω
14
Ω
20
Ω
Package Dimensions
unit : mm
1.6
0.75
MIN 0.5
0.1
0.3 0.5 0.5
123
0.23 0.3
456
78 9
0.15
0.8
0.30
Equivalent Circuit
Drain
c
TR1
e
TR2
i
TR3
k
TR4
gd
h
f
j
Source Gate
(Common)
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