FX851 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

FX851
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter
[MOSFET]
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±12V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–500mA
ID=–500mA, VGS=–10V
ID=–500mA, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–1A, VGS=0
VR
VF
IR
C
trr
Rthj-a
IR=300µA
IF=700mA
VR=15V
VR=10V, f=1MHz Cycle
IF=IR=100mA, See specified Test CIrcuit
Mounted on ceramic board (750mm²Ã—0.8mm)
Ratings
Unit
min
typ
max
–30
V
–100 µA
±10 µA
–1.0
–2.0 V
0.6
1.0
S
0.5 0.75 Ω
0.75
1.1 Ω
170
pF
110
pF
20
pF
10
ns
13
ns
70
ns
30
ns
–0.9
V
30
V
0.55 V
80 µA
26
pF
10 ns
100
˚C/W
Switching Time Test CIrcuit [MOSFET] Trr Test Circuit [SBD]
No.4891-2/4