FX601 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX601
Parameter
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
VDS=–12V, VGS=0
VGS=±12, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–500mA
ID=–500mA, VGS=–10V
ID=–500mA, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
IS=–1A, VGS=0
Ratings
Unit
min
typ
max
–12
V
–100 µA
±10 µA
–1.0
–2.0 V
0.7
1.2
S
0.3 0.42 Ω
0.45 0.63 Ω
170
pF
170
pF
40
pF
10
ns
14
ns
70
ns
40
ns
–0.9
V
No.4884-2/4