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FX510 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Current Switching Applications | |||
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Continued from preceding page.
Electrical Characteristics at Ta = 25ËC
FX510
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
hFE(small/
large)
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=â120V, IE=0
VEB=â4V, IC=0
VCE=â5V, IC=ââ100mA
VCE=â5V, IC=â10mA
VCE=â5V, IC=â100mA
VCE=â10V, IC=â100mA
VCB=â10V, f=1MHz
IC=â500mA, IB=â50mA
IC=â500mA, IB=â50mA
IC=â10µA, IE=0
IC=â1mA, RBE=â
IE=â10µA, IC=0
See sepcified Test Circuit
See sepcified Test Circuit
See sepcified Test Circuit
Ratings
Unit
min
typ
max
â1 µA
â1 µA
140
400
80
0.8
â180
â160
â6
150
22
â200
â0.85
60
700
50
â500
â1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
No.5030-2/4
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