FX509 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Current Switching Applications

Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX509
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
hFE(small/
large)
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=–100V, IE=0
VEB=–4V, IC=0
VCE=–5V, IC=––500mA
VCE=–5V, IC=–2A
VCE=–5V, IC=–500mA
VCE=–5V, IC=–500mA
VCB=–10V, f=1MHz
IC=–1.5A, IB=–150mA
IC=–1.5A, IB=–150mA
IC=–10µA, IE=0
IC=–1mA, RBE=∞
IE=–10µA, IC=0
See sepcified Test Circuit
See sepcified Test Circuit
See sepcified Test Circuit
Ratings
Unit
min
typ
max
–1 µA
–1 µA
140
400
40
0.8
–120
–100
–6
180
40
–200
–0.9
100
800
50
–500
–1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
No.5029-2/4