FX506 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Current Switching Applications

Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX506
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
hFE(small/
large)
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=4A
VCE=2V, IC=500mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz
IC=3A, IB=150mA
IC=3A, IB=150mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See sepcified Test Circuit
See sepcified Test Circuit
See sepcified Test Circuit
Ratings
Unit
min
typ
max
1 µA
1 µA
140
400
35
0.8
180
40
220
0.95
60
50
6
50
500
20
MHz
pF
400 mV
1.3 V
V
V
V
ns
ns
ns
No.4880-2/4