FX503 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Current Switching Applications

Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX503
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
hFE(small/
large)
VCB=–40V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–100mA
VCE=–2V, IC=–3A
VCE=–2V, IC=–100mA
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
VCE=–10V, IC=–100mA
VCB=–10V, f=1MHz
IC=–2A, IB=–100mA
IC=–2A, IB=–100mA
IC=–10µA, IE=0
IC=–1mA, RBE=∞
IE=–10µA, IC=0
See sepcified Test Circuit
See sepcified Test Circuit
tf
See sepcified Test Circuit
Ratings
Unit
min
typ
max
–1 µA
–1 µA
140
400
35
0.8
150
39
–350
–0.94
–60
–50
–6
70
450
35
–700
–1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
No.4903-2/4