FW241 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Swiching Applications

FW241
Continued from preceding page.
Parameter
Symbol
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=3.5A, VGS=10V
ID=1.8A, VGS=4.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=3.5A
VDS=10V, VGS=10V, ID=3.5A
VDS=10V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0
Ratings
Unit
min
typ
max
64
84 mΩ
105
150 mΩ
180
pF
42
pF
25
pF
7
ns
3
ns
20
ns
6
ns
5.0
nC
0.9
nC
0.6
nC
0.88
1.2
V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=1A
RL=15Ω
D
VOUT
FW241
P.G
50Ω
S
Electrical Connection
D1 D1 D2 D2
S1 G1 S2 G2
ID -- VDS
7
6
5
4
VGS=3V
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT02676
300
RDS(on) -- VGS
Ta=25°C
250
200
1.8A
150
ID=3.5A
100
50
0
2
3
4
5
6
7
8
9
10
Gate-to-Source Voltage, VGS -- V IT02678
ID -- VGS
3.0
VDS=10V
2.5
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT02677
RDS(on) -- Ta
200
150
100
IIDD==13.8.5AA, ^V, _VGGS=S4=V10V
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02679
No.6939-2/4