FW214 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
VDD=10V
ID=5A
RL=2Ω
D
VOUT
G
P.G
50Ω
FW214
S
FW214
6
I D - VDS
5
4
3
2
VGS=1.5V
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS - V
100
7 ^VDS^=10V
5
| ^yfs | – I D
3
2
10
25˚C
7
5
3
Ta
=-
25˚C
75˚C
2
1.0
7
5
3
2
0.1
7 _0.01 2 3 5 7 _0.1 2 3 5 7 _1.0 2 3 5 7 ₁₀ 2
Drain Current, ID - A
100
RDS(on) - Tc
90
80
70
60
ID^{=2A, VGS=2.5V}
50
40
ID^{=5A, VGS=4V}
30
20
10
0
-60 -40 -20 0 20 40 60 80 100 120 140
Case Temperature, Tc - ˚C
10
VDS =10V
9
I D - VGS
8
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VDS - V
100
RDS(on) - VGS
Tc = 25˚C
90
80
70
60
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage,VGS - V
10
7
VGS= 0
5
3
2
I F - VSD
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD – V
No.5850-2/3