FTD7011 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

FTD7011
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--3A, VGS=--4.5V
ID=--1.5A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--7A
VDS=--6V, VGS=--4.5V, ID=--7A
VDS=--6V, VGS=--4.5V, ID=--7A
IS=--7A, VGS=0V
Ratings
Unit
min
typ
max
14
19 mΩ
20
28 mΩ
32
56 mΩ
1780
pF
540
pF
390
pF
22
ns
170
ns
145
ns
128
ns
18
nC
2.8
nC
4.9
nC
--0.78
--1.2
V
Package Dimensions
unit : mm (typ)
7006A-002
3.0
8
5
0.125
1
4
0.25
0.65
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
Electrical Connection
8765
12 3 4
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
Top view
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.≤1%
G
VDD= --6V
ID= --7A
RL=0.86Ω
D
VOUT
FTD7011
P.G
50Ω
S
No. A1316-2/4