FTD2017 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Load Switching Applications

FTD2017
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Conditions
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
VDS=10V, VGS=10V, ID=5A
IS=5A, VGS=0
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=5A
RL=2Ω
D
VOUT
P.G
50Ω
S ^FTD2017
Electrical Connection
D2 S2 S2 G2
D1 S1 S1 G1
Ratings
Unit
min
typ
max
19
ns
190
ns
90
ns
160
ns
42
nC
4
nC
8
nC
0.8
1.2 V
10
3.5V
9
8
7
ID -- VDS
3.0V
2.5V
1.5V
6
5
4
3
2
1
VGS=1.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS – V _IT00922
RDS(on) -- VGS
60
Ta=25°C
50
40
30 _ID=2A
5A
20
10
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS – V _IT00924
10
VDS=10V
9
ID -- VGS
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS – V _IT00923
RDS(on) -- Ta
50
40
30
ID=2A, ^VGS=2.5V
20
ID=5A, ^VGS=4.0V
10
0
--50 --25
0
25
50
75 100 125 150
Ambient Temperature, Ta – °C
IT00925
No.6361-2/4