FTD2011 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Load Switching Applications

FTD2011
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Conditions
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
VDS=10V, VGS=10V, ID=4A
IS=5A, VGS=0
Switching Time Test Circuit
4V ^VIN
0V
VIN
PW=10µs
D.C.≤1%
VDD=10V
ID=4A
RL=2.5Ω
VOUT
D
Electrical Connection
D2 S2 S2 G2
G
P.G
50Ω
S ^FTD2011
Ratings
Unit
min
typ
max
15
ns
150
ns
100
ns
150
ns
32
nC
1.5
nC
6
nC
0.82
1.2 V
A11947
I _D - VDS
10
3.5V
9
3.0V
2.5V
8
2.0V
7
6
5
1.5V
4
3
2
1
VGS=1.0V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-to-Source Voltage, VDS – V
| ^yf s | - ID
5
VDS=10V
3
2
10
7
Ta=-25^°_7C5°C
25^°C
5
3
2
1.0
0.1
23
5 7 _1.0
23
5 7 ₁₀
2
Drain Current, ID – A
D1 S1 S1 G1
A11948
10
VDS=10V
9
8
7
6
ID - VGS
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS – V
RDS(on) - VGS
70
Ta=25°C
60
ID=5A
50
ID=2A
40
30
20
10
00
2
4
6
8
10
12
Gate-to-Source Voltage, VGS – V
No.6072-2/4