FP207 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – Push-Pull Circuit Applications

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
FP207
Symbol
Conditons
VCE(sat) IC=(–)800mA, IB=(–)40mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)800mA, IB=(–)40mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
ton
See specified Test Circuit
tstg
See specified Test Circuit
tf
See specified Test Circuit
Ratings
Unit
min typ max
(–0.3) (–0.8) mV
0.25
0.7 mV
(–)0.9 (–)1.3 V
(–)50
V
(–)40
V
(–)5
V
(50) (100) ns
50 100 ns
(120) (220) ns
150 270 ns
(30)30 (80)80 ns
Electrical Connection (Top view)
C1
C2
C1 C2
B1 EC B2
Switching Time Test Circuit
IB1
INPUT
IB2
PW=20µs
D.C.≤1%
RB
VR ₊
50Ω
100µF
OUTPUT
RL
+
470µF
VBE=--5V
VCC=25V
(For PNP, the polarity is reversed.)
10IB1= --10IB2= IC=400mA
IC -- VCE
[PNP]
--1.0
--8mA
--7mA
--6mA
--0.8
--5mA
--0.6
--4mA
--3mA
--0.4
--2mA
--0.2
--1mA
0
IB=0
0
--1
--2
--3
--4
--5
Collector-to-Emitter Voltage, VCE – V _IT01846
IC -- VBE
[PNP]
--1.6
VCE= --2V
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V _IT01848
IC -- VCE
[NPN]
1.0
4.0mA
3.5mA
0.8
3.0mA
2.5mA
0.6
2.0mA
0.4
1.5mA
1.0mA
0.2
0.5mA
0
IB=0
0
1
2
3
4
5
Collector-to-Emitter Voltage, VCE – V _IT01847
IC -- VBE
[NPN]
1.6
VCE=2V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE – V _IT01849
No.6457–2/5