FP106 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

FP106
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
.Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditons
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
VCB=–12V, IE=0
VEB=–3V, IC=0
VCE=–2V, IC=–0.5A
VCE=–2V, IC=–3A
VCE=–2V, IC=–0.3A
VCE=–10V, f=1MHz
IC=–1.5A, IB=–75mA
IC=–1.5A, IB=–75mA
IC=–10µA, IE=0
IC=–1mA, RBE=∞
IE=–10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf
See specified Test Circuit
VR
VF
IR
C
trr
Rthj-a
IR=300µA
IF=1A
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
Mounted on ceramic board (250mm²Ã—0.8mm)
Switching Time Test Circuit
(TR)
(SBD)
Ratings
Unit
min
typ
max
100
50
300
28
–0.25
–0.95
–15
–15
–5
30
100
120
–1 µA
–1 µA
280
MHz
pF
–0.5 V
–1.2 V
V
V
V
ns
ns
ns
15
V
0.55 V
50 µA
30
pF
10 ns
120
˚C/W
No.4552-2/4