FP102 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC-DC Converter Applications

FP102
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditons
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
VCB=–12V, IE=0
VEB=–6V, IC=0
VCE=–2V, IC=–0.5A
VCE=–2V, IC=–3A
VCE=–2V, IC=–0.3A
VCB=–10V, f=1MHz
IC=–1.5A, IB=–30mA
IC=–1.5A, IB=–30mA
IC=–10µA, IE=0
IC=–1mA, RBE=∞
IE=–10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf
See specified Test Circuit
VR
VF
IR
C
trr
Rthj-a
IR=300µA
IF=700mA
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
Mounted on ceramic board (250mm²Ã—0.8mm)
Switching Time Test Circuit
(TR)
(SBD)
Ratings
Unit
min
typ
max
140
70
400
26
–0.22
–0.9
–15
–11
–7
25
200
10
–0.1 µA
–0.1 µA
560
MHz
pF
–0.4 V
–1.2 V
V
V
V
ns
ns
ns
30
V
0.55 V
80 µA
28
pF
10 ns
120
˚C/W
No.3961-2/4