EFC4618R Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

EFC4618R
Electrical Characteristics at Ta=25°C
Parameter
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Forward Source-to-Source Voltage
Symbol
V(BR)SSS
ISSS
IGSS
VGS(off)
| yfs |
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
td(on)
tr
td(off)
tf
Qg
VF(S-S)
Conditions
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.7V
IS=3A, VGS=3.1V
IS=3A, VGS=2.5V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VSS=10V, VGS=4.5V, IS=6A
IS=3A, VGS=0V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 7
Test Circuit 7
Test Circuit 7
Test Circuit 7
Test Circuit 6
Ratings
Unit
min
typ
max
24
V
1
μA
±10
μA
0.5
1.3
V
6.5
S
13.5
19.8
23 mΩ
14
20.5
24 mΩ
14.5
21
25.5 mΩ
14.9
23
30 mΩ
18.5
27
35 mΩ
200
ns
815
ns
1840
ns
1770
ns
25.4
nC
0.76
1.2
V
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
S2
G2
Test Circuit 2
IGSS(+) / (--)
S2
G2
G1
S1
Test Circuit 3
VGS(off)
S2
G2
IT11565
10V 1mA
G1
S1
IT11567
G1
S1
Test Circuit 4
| yfs |
S2
G2
IT11566
G1
S1
IT11568
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
No. A1881-2/5