ECH8616 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2206B
0.3
8
5
1
4
0.65
2.9
ECH8616
Symbol
Conditions
min
Qg
VDS=30V, VGS=10V, ID=3A
Qgs
VDS=30V, VGS=10V, ID=3A
Qgd
VDS=30V, VGS=10V, ID=3A
VSD
IS=3A, VGS=0
Electrical Connection
Ratings
Unit
typ
max
12.8
nC
2.1
nC
2.7
nC
0.81
1.2
V
0.15
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
1 2 3 4 8 : Drain1
Top view
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=30V
ID=1.5A
RL=20Ω
D
VOUT
ECH8616
P.G
50Ω
S
No.8191-2/4