ECH8411 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

ECH8411
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=4V, ID=9A
VDS=10V, VGS=4V, ID=9A
VDS=10V, VGS=4V, ID=9A
IS=9A, VGS=0V
Ratings
Unit
min
typ
max
21
nC
3.5
nC
6.2
nC
0.84
1.2
V
Package Dimensions
unit : mm
7011-002
Top View
0.3
0.15
8
5
1
4
0.65
2.9
Electrical Connection
8
7
6
5
1
2
3
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Switching Time Test Circuit
VIN
4V
0V
PW=10µs
D.C.≤1%
VIN
G
VDD=10V
ID=4A
RL=2.5Ω
D
VOUT
P.G
50Ω
S ^ECH8411
No. A0073-2/4