ECH8401 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ECH8401
Continued from preceding page.
Parameter
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=5A, VGS=3.1V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
IS=10A, VGS=0
Ratings
Unit
min
typ
max
14
20
S
9
14 mΩ
10
15.5 mΩ
12
19 mΩ
1700
pF
330
pF
270
pF
29
ns
150
ns
220
ns
160
ns
52
nC
2.6
nC
7.4
nC
0.82
1.2
V
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=5A
RL=2Ω
D
VOUT
Electrical Connection
D
D
D
D
P.G
ECH8401
50Ω
S
S
S
S
G
ID -- VDS
10
9
8
7
6
VGS=1.5V
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT04242
10
VDS=10V
9
ID -- VGS
8
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
Gate-to-Source Voltage, VGS -- V IT04243
No.7609-2/4