EC4409C Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

EC4409C
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
IS=350mA, VGS=0V
Ratings
Unit
min
typ
max
17.5
ns
34.2
ns
104
ns
55.5
ns
0.87
nC
0.39
nC
0.14
nC
0.86
1.2
V
Package Dimensions
unit : mm (typ)
7036-001
Top View
0.8
4
3
1
2
Polarity Discriminating Mark
Type No. Indication Electrical Connection
Polarity mark (Top)
KB
Top view
Gate
Source
Drain
*Electrodes : on the bottom
Top view
Polarity mark (Top)
Drain
0.5
0.2
1
2
4
3
Bottom View
1 : Gate
2 : Source
3 : Drain
4 : Drain
SANYO : ECSP1008-4
Gate
Source
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=200mA
RL=75Ω
D
VOUT
Rg
EC4409C
P.G
50Ω
S
Rg=1.2kΩ
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