DBD10 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – 1.0A Single-Phase Bridge Rectifier

DBD10
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Ta=25°C
50Hz sine wave 1cycle
Parameter
Forward Voltage
Reverse Current
Thermal Resistance
Thermal Resistance
Symbol
VF
IR
Rth(j-l)
Rth(j-a)
Conditions
IF=0.5A
VR : At each VRM
Junction-Lead
Junction-Ambient
Ratings
Unit
DBD10C
DBD10G
200
600
V
→
1.0
A
→
30
A
→
150
°C
→ --40 to +150
°C
Ratings
Unit
min
typ
max
1.05
V
10 µA
15 °C / W
68 °C / W
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
50
IF -- VF
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage, VF -- V
IFSM -- n
IT03617
40
30
20
50Hz
10
0
1.0
23
5 7 ₁₀
23
5 7 ₁₀₀
Number of Cycle at 50Hz -- n
IT03619
IO -- Ta
1.2
1.0
0.8
0.6
Resistive _load
0.4
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03618
PF -- IO
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Average Forward Current, IO -- A IT03620
No.7030-2/3