CPH6801 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications

CPH6801
Electrical Characteristics at Ta = 25˚C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : QB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=–1mA, VGS=0
VDS=–20V, VGS=0
VGS=±8V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–500mA
ID=–500mA, VGS=–4V
ID=–300mA, VGS=–2.5V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=1.0A
VDS=–10V, VGS=–10V, ID=1.0A
VDS=–10V, VGS=–10V, ID=1.0A
IS=–1.0A, VGS=0
VR
VF1
VF2
IR
C
trr
Rthj-a
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm²Ã—0.8mm)
Electrical Connection (Top view)
Cathode Common
D
D
D
Ratings
Unit
min
typ
max
–20
V
–10 µA
±10 µA
–0.4
–1.4 V
1.0
1.4
S
420 550 mΩ
630 890 mΩ
100
pF
60
pF
25
pF
10
ns
25
ns
27
ns
32
ns
5
nC
1
nC
1
nC
–0.9 –1.5 V
15
V
0.30 0.35 V
0.35 0.40 V
500 µA
42
pF
15 ns
110
˚C/W
G
S
A
Switching Time Test Circuit
[MOSFET]
t_rr Test Circuit
[SBD]
VIN
0V
--4V
PW=10µs
D.C.≤1%
VIN
G
VDD=--10V
ID=--500mA
RL=20Ω
D
VOUT
Duty≤10%
50Ω
100Ω
10Ω
10µs
P.G
50Ω
CPH6801
S
--5V
trr
No.6419–2/5