CPH6539 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Electrical Characteristics at Ta=25°C
CPH6539
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=750mA, IB=15mA
IC=750mA, IB=15mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
50Ω
RB
+
100μF
RL
16Ω
+
470μF
VBE= --5V
VCC=12V
20IB1= --20IB2=IC=750mA
Ratings
min
typ
200
500
8
160
0.85
40
30
5
35
205
30
max
0.1
0.1
560
250
1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
ns
ns
IC -- VCE
2.0
30mA
1.8
40mA
1.6
20mA
15mA
1.4
8mA _10mA
1.2
1.0
6mA
4mA
0.8
0.6
2mA
0.4
0.2
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT15612
IC -- VBE
0.8
VCE=2V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Base-to-Emitter Voltage, VBE -- V IT15613
No. A1756-2/4