CPH6532 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

CPH6532
Continued from preceding page.
Parameter
Symbol
Conditions
Collector-to-Emitter Saturation Voltage
VCE(sat)1 IC=500mA, IB=10mA
VCE(sat)2 IC=300mA, IB=6mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=500mA, IB=10mA
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=10µA, IE=0A
Collector-to-Emitter Breakdown Voltage
V(BR)CES IC=100µA, RBE=0Ω
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0A
Turm-ON Time
ton
See specified Test Circuit.
Storage Time
tstg
See specified Test Circuit.
Fall Time
tf
See specified Test Circuit.
Note) The specifications shown above are for each individual transistor.
Ratings
Unit
min
typ
max
130
190 mV
90
135 mV
0.81
1.2
V
80
V
80
V
50
V
5
V
38
ns
332
ns
40
ns
Package Dimensions
unit : mm (typ)
7018A-006
2.9
0.15
654
0.05
12
0.95
3
0.4
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
SANYO : CPH6
Electrical Connection
6
5
4
1
2
3
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
Top view
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
20IB1= --20IB2=IC=500mA
IC
OUTPUT
RL
+
470µF
VCC=25V
No. A0522-2/4