CPH6517 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications

CPH6517
Continued from preceding page.
Parameter
Symbol
Conditions
DC Current Gain
DC Current Gain Ratio
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
hFE1
hFE2
hFE(Small /
Large)
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=2V, IC=10mA
VCE=2V, IC=400mA
VCE=2V, IC=10mA
VCE=2V, IC=50mA
VCB=10V, f=1MHz
IC=5mA, IB=0.5mA
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
IC -- VCE
200
1.0mA
0.9mA
0.8mA
0.7mA
600
500
160
0.6mA
0.5mA
400
120
0.4mA
300
0.3mA
80
0.2mA
200
min
160
80
Ratings
typ
0.8
0.98
300
4
15
160
0.95
20
15
5
IC -- VBE
Unit
max
560
MHz
pF
30 mV
300 mV
1.2
V
V
V
V
VCE=2V
40
0.1mA
100
0
0
1000
7
5
3
2
IB=0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V ITR10442
hFE -- IC
VCE=2V
Ta=75_°C
25°C
--25°C
100
7
5
3
2
1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ^{2 3 5 7}
Collector Current, IC -- mA
ITR10444
Cob -- VCB
5
f=1MHz
3
2
10
7
5
3
2
1.0
5 7 _1.0
2
3
5 7 ₁₀
2
3
Collector-to-Base Voltage, VCB -- V ITR10446
0
0
2
1000
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE -- V ITR10443
fT -- IC
VCE=2V
100
7
5
5 7 ₁₀
5
3
2
23
5 7 ₁₀₀
2
Collector Current, IC -- mA
VCE(sat) -- IC
3
5
ITR10445
IC / IB=20
1000
7
5
3
2
100
7
5
3
2
10
5 7 _1.0
25^°C
Ta=75^°C
--25^°C
2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Collector Current, IC -- mA
2 3 57
ITR10447
No.7385-2/3