CPH6501 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC / DC Converter Applications

CPH6501
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=2V, IC=100mA
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=750mA, IB=15mA
IC=750mA, IB=15mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
min
200
40
30
5
Ratings
typ
500
8
150
0.85
35
205
30
max
560
225
1.2
Unit
MHz
pF
mV
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
Electrical Connection
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
100µF
VBE= --5V
20IB1= --20IB2=IC=750mA
OUTPUT
RL
16Ω
+
470µF
VCC=12V
C1 B2 E2
E1 B1 C2
IC -- VCE
2.0
1.8
40mA
30mA
1.6
20mA
1.4
8mA 10mA
1.2
6mA
1.0
4mA
0.8
0.6
2mA
0.4
0.2
0
0
1000
7
5
3
2
IB=0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT01674
hFE -- IC
VCE=2V
Ta=75°C
25°C
--25°C
100
7
5
3
2
10
0.01
23
5 7 _0.1
2 3 5 7 _1.0
23
Collector Current, IC -- A
IT01678
IC -- VBE
1.6
VCE=2V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT01676
f _T -- IC
3
2
VCE=10V
1000
7
5
3
2
100
7
5
3
2
0.01
23
5 7 _0.1
23
5 7 _1.0
2
Collector Current, IC -- A
IT01680
No.6592-2/4