CPH6444_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH6444
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=30V
ID=2A
RL=15Ω
D
VOUT
CPH6444
P.G
50Ω
S
Ratings
Unit
min
typ
max
60
V
1
μA
±10
μA
1.2
2.6
V
1.8
3
S
60
78 mΩ
74
104 mΩ
81
114 mΩ
505
pF
57
pF
37
pF
7.3
ns
9.8
ns
40
ns
24
ns
10
nC
1.6
nC
2.1
nC
0.83
1.2
V
Ordering Information
Device
CPH6444-TL-E
Package
CPH6
Shipping
3,000pcs./reel
memo
Pb Free
No. A1243-2/7