CPH6442 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH6442
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=6A
VDS=30V, VGS=10V, ID=6A
VDS=30V, VGS=10V, ID=6A
IS=6A, VGS=0V
Ratings
Unit
min
typ
max
1040
pF
90
pF
55
pF
12
ns
18
ns
80
ns
35
ns
20
nC
3.0
nC
4.2
nC
0.82
1.2
V
Package Dimensions
unit : mm (typ)
7018A-003
2.9
0.15
654
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=30V
ID=3A
RL=10Ω
D
VOUT
CPH6442
P.G
50Ω
S
ID -- VDS
6.0
5.5
5.0
4.5
4.0
3.5
3.0
3.0V
2.5
2.0
1.5
1.0
0.5
VGS=2.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT13778
7
VDS=10V
6
ID -- VGS
5
4
3
2
1
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT13779
No. A1242-2/4