CPH6406 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
CPH6406
Symbol
Conditions
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=3A
VDS=10V, VGS=10V, ID=3A
VDS=10V, VGS=10V, ID=3A
IS=3A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
PW=10µs
D.C.≤1%
VIN
G
VDD=30V
ID=1.5A
RL=20Ω
D
VOUT
P.G
50Ω
S CPH6406
Ratings
Unit
min
typ
max
7
ns
8
ns
30
ns
29
ns
8.6
nC
1.3
nC
1.8
nC
0.83
1.2 V
3.5
6.0V
3.0
8.0V
2.5
2.0
ID -- VDS
5.0V
3.0V
1.5
VGS=2.5V
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS – V _IT01245
RDS(on) -- VGS
250
Ta=25°C
200
ID=1.0A _1.5A
150
100
50
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS – V IT01247
6
VDS=10V
5
ID -- VGS
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS – V IT01246
RDS(on) -- Ta
300
250
200
150
I D=ID1.=01A.5,AV,GVSG=4SV=10V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
IT01248
No.6418-2/4