CPH6405 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

CPH6405
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
IS=6A, VGS=0
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=3A
RL=5Ω
D
VOUT
CPH6405
P.G
50Ω
S
Ratings
Unit
min
typ
max
560
pF
120
pF
70
pF
12
ns
135
ns
50
ns
110
ns
24
nC
1.5
nC
3.2
nC
1.2
V
ID -- VDS
12
10
8
6
1.5V
4
2
VGS=1.0V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-to-Source Voltage, VDS -- V IT05419
RDS(on) -- VGS
60
Tc=25°C
50
ID=1A ^3A
40
30
20
10
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT05421
12
VDS=10V
10
ID -- VGS
8
6
4
2
Ta=75^°C
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS -- V IT05420
RDS(on) -- Tc
70
60
50
40
I DI=D1=A3,AV, ^{GVSG=S2=.54V.0V}
30
20
10
--50
--25
0
25
50
75
100
125
Case Temperature, Tc -- °C
IT05422
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