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CPH6301 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
CPH6301
Symbol
Conditions
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–3A
VDS=–10V, VGS=–10V, ID=–3A
VDS=–10V, VGS=–10V, ID=–3A
IS=–3A, VGS=0
Switching Time Test Circuit
0V VIN
–4V
VIN
PW=10µs
D.C.≤1%
VDD=–10V
ID=–1.5A
RL=6.6Ω
D
VOUT
G
CPH6301
P.G
50Ω
S
Ratings
Unit
min
typ
max
10
ns
42
ns
56
ns
56
ns
18
nC
1
nC
3
nC
–0.85 –1.5 V
ID - VDS
-3.5
–8.0V
-3.0
–2.5V
–2.0V
-2.5
-2.0
-1.5
-1.0
VGS=–1.5V
-0.5
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Drain-to-Source Voltage, VDS – V
| yfs | - I D
10 VDS=–10V
7
5
3
Ta=–2755°°CC
25°C
2
1.0
7
5
3
2
0.1
-0.01
23
5 7 -0.1 2 3 5 7 -1.0
Drain Current, ID – A
23
5 7 -10
-6 VDS=–10V
-5
ID - VGS
-4
-3
-2
-1
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
Gate-to-Source Voltage, VGS – V
RDS(on) - VGS
300
Ta=25°C
ID=–1.5A
250
ID=–0.5A
200
150
100
50
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-to-Source Voltage, VGS – V
No.5938-2/4