CPH6102 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Current Switching Applications

CPH6102/CPH6202
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
Symbol
Conditions
VCE(sat) IC=(–)500mA, IB=(–)50mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)500mA, IB=(–)50mA
IC=(–)10μA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10μA, IC=0
See specified test circuit.
tstg
See specified test circuit.
tf
See specified test circuit.
PW=20μs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
100μF
OUTPUT
RL
470μF
VBE=–5V
VCC=25V
10IB1=–10IB2=IC=500mA
(For PNP, the polarity is reversed.)
Ratings
Unit
min
typ
max
(–180) (–500) mV
120 300 mV
(–)0.9 (–)1.2 V
(–)60
V
(–)50
V
(–)5
V
40(40)
ns
350
ns
(300)
ns
30(30)
ns
No.5810–2/4