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CPH6001A_12 Datasheet, PDF (2/8 Pages) Sanyo Semicon Device – High-Frequency Low-Noise Amplifier Applications
CPH6001A
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Cre
| S21e |2
NF
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=30mA
VCE=5V, IC=70mA
VCE=5V, IC=30mA
VCB=5V, f=1MHz
VCE=5V, IC=30mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
Ordering Information
Device
CPH6001A-TL-E
Package
CPH6
Shipping
3,000pcs./reel
Ratings
Unit
min
typ
max
1.0
μA
10
μA
90
180
70
5
6.7
GHz
0.95
1.5
pF
0.6
pF
9
11
dB
1.1
2.0 dB
memo
Pb Free
50
45
40
35
30
25
20
15
10
5
0
0
7
5
3
2
100
7
5
3
2
IC -- VCE
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0mA
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT00469
hFE -- IC
VCE=5V
2V
10
3 5 7 1.0
2 3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC -- mA
IT00471
IC -- VBE
100
90
80
70
60
50
40
30
20
10
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Base-to-Emitter Voltage, VBE -- V IT00470
fT -- IC
10
7
V CE=5V
5
2V
3
2
1.0
1.0
23
5 7 10
23
Collector Current, IC -- mA
5 7 100
IT00472
No. A1079-2/8