CPH5905_05 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications

CPH5905
Electrical Characteristics at Ta=25°C
Parameter
[FET]
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
^yfs
Ciss
Crss
NF
IG=--10µA, VDS=0V
VGS=--10V, VDS=0V
VDS=5V, ID=100µA
VDS=5V, VGS=0V
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=35V, IE=0A
VEB=4V, IC=0A
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10µA, IE=0A
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
Unit
min
typ
max
--15
--0.4
10.0*
24
V
--1.0 nA
--0.7
--1.5
V
32.0* mA
35
mS
10.0
pF
2.9
pF
1.0
dB
135
200
1.7
0.08
0.8
55
50
6
0.15
0.75
0.20
0.1 µA
0.1 µA
400
MHz
pF
0.4
V
1.0
V
V
V
V
µs
µs
µs
* : The CPH5905 is classified by IDSS as follows : (unit : mA)
Rank
G
H
IDSS
10.0 to 20.0
16.0 to 32.0
The specifications shown above are for each individual FET or a transistor.
Package Dimensions
unit : mm
7017-007
0.4
0.15
5 43
0.05
1
2
0.95
2.9
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
Electrical Connection
5
4
3
1
2
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
Top view
Switching Time Test Circuit
PC=20µs
D.C.≤1%
INPUT
50Ω
IB1
IB2
1kΩ
VR
+
220µF
OUTPUT
RL
2kΩ
+
470µF
VBE= --5V
10IB1= --10IB2=IC=10mA
VCC=20V
No.7177-2/6