CPH5902 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications

CPH5902
Electrical Characteristics at Ta=25°C
Parameter
[FET]
Gate-to-Drain Breakdown Voltage`
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Marking : RB
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
^yfs
Ciss
Crss
NF
IG=--10µA, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
Unit
min
typ
max
--15
--0.4
10.0*
24
V
--1.0
nA
--0.7
--1.5
V
32.0* mA
38
mS
10.0
pF
2.9
pF
1.0
dB
0.1
µA
0.1
µA
135
400
200
MHz
1.7
pF
0.08
0.4
V
0.8
1.0
V
55
V
50
V
6
V
0.15
µs
0.75
µs
0.20
µs
* : The CPH5902 is classified by IDSS as follows : (unit : mA)
Rank
G
H
IDSS
10.0 to 20.0
16.0 to 32.0
The specifications shown above are for each individual FET or transistor.
Package Dimensions
unit : mmm
2196
2.9
543
0.15
0.05
1
0.95
2
0.4
0.4
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
Electrical Connection
5
4
3
1
2
1 : Collector
2 : Gate
3 : Source
4 : Emitter / Drain
5 : Base
Top view
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