CPH5838 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH5838
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
Rth(j-a)
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--500mA
ID=--500mA, VGS=--4V
ID=--300mA, VGS=--2.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--1A
VDS=--10V, VGS=--4V, ID=--1A
VDS=--10V, VGS=--4V, ID=--1A
IS=--1A, VGS=0
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz, cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (900mm²!0.8mm)
Ratings
min
typ
--20
--0.4
0.72
1.2
380
540
115
23
15
8
6
15
7
1.5
0.4
0.3
--0.89
15
0.30
0.35
42
110
Unit
max
V
--1 µA
±10 µA
--1.4
V
S
500 mΩ
760 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2
V
V
0.35
V
0.40
V
500 µA
pF
15 ns
°C / W
Package Dimensions
unit : mm
2171A
0.4
0.15
5 43
0.05
1
2
0.95
2.9
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
No.8235-2/6