CPH5831 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH5831
Electrical Characteristics at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS= ±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
IS=3A, VGS=0
VR
VF1
VF2
IR
C
trr
Rth(j-a)
IR=1.5mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm²!0.8mm)
Ratings
min
typ
20
0.4
3.36
5.6
48
58
72
280
60
38
13
35
35
25
8.8
0.85
0.85
0.82
15
0.27
0.30
65
138
Unit
max
V
1 µA
±10 µA
1.3
V
S
63 mΩ
82 mΩ
110 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2
V
V
0.32
V
0.35
V
600 µA
pF
15 ns
°C / W
Package Dimensions
unit : mm
2171
2.9
543
0.15
0.05
1
0.95
2
0.4
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
No.8220-2/6